Micron Technology, a US semiconductor company, has announced the launch of the world’s first 176-layer 3D NAND flash memory.
Micron announced the details of its 176-layer 3D NAND flash memory, reducing its 512Gbit die size by up to 30% over its competitors and achieving 1600 MT/sec with an open NAND flash interface ONFI bus. These two technological advances also revealed that they achieved more than 35% read and write, improved latency and 15% improved mixed workload compared to the company’s 96-layer 3D NAND.
It is the 3D NAND replacement gate technology adopted for 128-layer 3D NAND that has greatly contributed to the development of this technology. This 176-layer 3D NAND is reported to have been able to improve the capacity and coupling problem between cells by reducing the resistance among metal control gates with this technology, and to realize a large data storage system with fast and smooth high performance.
The 176 layer 3D NAND announced this time has already begun production, and is expected to be installed in consumer SSDs that Crucial will release in 2021. The SSD with 176 layer 3D NAND made by Micron has not yet been announced, and it can be seen that there are only a few shipments this year. From 2021, it is expected to move from the current 128-layer 3D NAND to 176 layers.
Samsung Electronics, SK Hynix, and YMTC, companies that produce 3D NAND, remain in the 128-layer stage, but Samsung Electronics announced that it will reach 176 layers by April 2021. Related information can be found here .